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| New Product SIR870DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.006 at VGS = 10 V 0.0064 at VGS = 7.5 V 0.0078 at VGS = 4.5 V ID (A)a 60 60 60 26.7 nC Qg (Typ.) FEATURES * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFET * 100 % Rg Tested * 100 % UIS Tested * Compliant to RoHS Directive 2002/95/EC PowerPAK(R) SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm * Fixed Telecom * DC/DC Converter * Primary and Secondary Side Switch D G Bottom View Ordering Information: SIR870DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C L =0.1 mH TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID Limit 100 20 60a 60a 22.8b, c 18.2b, c 100 60a 5.6b, c 35 61 104 66.6 6.25b, c 4.0b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg C THERMAL RESISTANCE RATINGS Parameter www..com Maximum Junction-to-Case (Drain) Maximum Junction-to-Ambient b, f t 10 s Steady State Symbol RthJA RthJC Typical 15 0.9 Maximum 20 1.2 Unit C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 54 C/W. Document Number: 67197 S10-2884-Rev. A, 20-Dec-10 www.vishay.com 1 New Product SIR870DP Vishay Siliconix SPECIFICATIONS (TJ = 25 C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Test Conditions VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 7.5 V, ID = 20 A VGS = 4.5 V, ID = 15 A VDS = 10 V, ID = 20 A Min. 100 Typ. Max. Unit V 60 - 6.0 1.2 3.0 100 1 10 30 0.005 0.0053 0.0065 80 0.006 0.0064 0.0078 mV/C V nA A A S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery www..comRise Time Currenta 2840 VDS = 50 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 20 A 1475 99 55.7 42.5 26.7 8.4 11.7 f = 1 MHz VDD = 50 V, RL = 2.5 ID 20 A, VGEN = 10 V, Rg = 1 0.3 0.95 12 10 38 8 15 VDD = 50 V, RL = 2.5 ID 20 A, VGEN = 7.5 V, Rg = 1 15 35 8 TC = 25 C IS = 5 A 0.74 63 IF = 20 A, dI/dt = 100 A/s, TJ = 25 C 82 27 36 1.9 24 20 70 16 30 30 70 16 60 100 1.1 120 160 ns 84 64 40 nC VDS = 50 V, VGS = 7.5 V, ID = 20 A VDS = 50 V, VGS = 4.5 V, ID = 20 A pF Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb A V ns nC ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67197 S10-2884-Rev. A, 20-Dec-10 New Product SIR870DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 100 10 80 ID - Drain Current (A) V GS = 10 V thru 4 V ID - Drain Current (A) 8 60 6 40 4 T C = 25 C 2 20 V GS = 3 V 0 0.0 V GS = 2 V 0.5 1.0 1.5 2.0 2.5 T C = 125 C 0 0 1 2 3 T C = - 55 C 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.009 4600 Transfer Characteristics RDS(on) - On-Resistance () 0.008 C - Capacitance (pF) 3680 Ciss 2760 0.007 V GS = 4.5 V 0.006 V GS = 7.5 V 0.005 V GS = 10 V 1840 Coss 920 Crss 0.004 0 20 40 60 80 100 0 0 20 40 60 80 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 20 A VGS - Gate-to-Source Voltage (V) Capacitance 2.1 ID = 20 A 1.8 RDS(on) - On-Resistance V GS = 10 V 8 V DS = 20 V 6 V DS = 40 V (Normalized) 1.5 V GS = 4.5 V 1.2 4 V DS = 60 V www..com 2 0.9 0 0 12 24 36 48 60 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 67197 S10-2884-Rev. A, 20-Dec-10 www.vishay.com 3 New Product SIR870DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 100 0.030 ID = 20 A RDS(on) - On-Resistance () 10 IS - Source Current (A) 0.024 T J = 150 C 1 0.018 0.1 T J = 25 C 0.012 T J = 125 C 0.006 T J = 25 C 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.000 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.5 200 On-Resistance vs. Gate-to-Source Voltage 0.2 VGS(th) Variance (V) 160 ID = 5 mA - 0.4 ID = 250 A - 0.7 Power (W) - 0.1 120 80 40 - 1.0 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (s) 1 10 TJ - Temperature (C) Threshold Voltage 100 Limited by RDS(on) * Single Pulse Power, Junction-to-Ambient 10 ID - Drain Current (A) 1 ms 10 ms 1 100 ms 1s 10 s TA = 25 C Single Pulse 0.01 0.01 BVDSS Limited 1 10 DC 100 www..com 0.1 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 67197 S10-2884-Rev. A, 20-Dec-10 New Product SIR870DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 105 84 ID - Drain Current (A) Package Limited 63 42 21 0 0 25 50 75 100 125 150 TC - Case Temperature (C) Current Derating* 125 3.0 100 2.4 Power (W) Power (W) 75 1.8 50 1.2 25 0.6 0 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 150 TC - Case Temperature (C) TA - Ambient Temperature (C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www..com Document Number: 67197 S10-2884-Rev. A, 20-Dec-10 www.vishay.com 5 New Product SIR870DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 PDM Notes: 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 10 -3 10 -2 10 -1 1 10 2. Per Unit Base = R thJA = 54 C/W 3. T JM - T A = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case www..com Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67197. www.vishay.com 6 Document Number: 67197 S10-2884-Rev. A, 20-Dec-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. www..com Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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